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2N5323 - SILICON POWER SWITCHING TRANSISTORS

Download the 2N5323 datasheet PDF. This datasheet also covers the 2N5320 variant, as both devices belong to the same silicon power switching transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current - Continuous Base Current Power Dissipation@ Ta=25ºC Derate Above 25ºC Power Dissipation@ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC IB PD PD Tj, Tstg 2N

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N5320-CDIL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N5323
Manufacturer CDIL
File Size 63.50 KB
Description SILICON POWER SWITCHING TRANSISTORS
Datasheet download datasheet 2N5323 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON POWER SWITCHING TRANSISTORS 2N5320, 2N5321 NPN 2N5322, 2N5323 PNP TO-39 Metal Can Package Medium Power Amplifier and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current - Continuous Base Current Power Dissipation@ Ta=25ºC Derate Above 25ºC Power Dissipation@ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC IB PD PD Tj, Tstg 2N5320 75 100 7 2N5321 2N5322 50 75 75 100 5 7 2.0 1.0 1 5.71 10 57.14 - 65 to +200 THERMAL CHARACTERISTICS Junction to Ambient in free air Junction to Case Rth (j-a) Rth (j-c) 175 17.