Description
SYMBOL TEST CONDITION MIN Collector Emitter Voltage VCEO IC=100mA, IB=0 2N5320/5322 75 2N5321/5323 50 Collector Cut Off Current ICEX VCE=70V, VBE=1.5V, Tc=150ºC 2N5320/5322 VCE=45V, VBE=1.5V, Tc=150ºC 2N5321/5323 VCE=100V, VBE=1.5V 2N5320/5322 Emitter Cut Off Current VCE=75V, VBE=1.5V 2N5321/5323 IEBO VBE=5V, IC=0 2N5321/5323 VBE=7V, IC=0 2N5320/5322 2N5323 50 75 5 UNITS V V V A A W mW/ ºC W mW/ ºC ºC ºC/W ºC/W MAX 5 UNITS V V mA 5 mA 100 µA 100 µA 100 µA 100 µA Continental Device India Limited Data Sheet Page 1 of 4 SILICON POWER SWITCHING TRANSISTORS 2N5320, 2N5321 NPN 2N5322, 2N5323 PNP TO-39 Metal Can Package DESCRIPTION SYMBOL TEST CONDITION DC Current Gain *hFE IC=1A, VCE=2V 2N5320/5322 Collector Emitter Saturation Voltage *VCE (sat) Base Emitter On Voltage *VBE (on) IC=0.5A, VCE=4V 2N5320/5322 2N5321/5323 IC=500mA, IB=50mA 2N5320 2N5321 2N5322 2N5323 IC=500mA, VCE=4V 2N5320/5322 2N5321/5323 DYNAMIC CHARACTERISTICS Small Signal Current Gain hfe IC=50mA,VCE=4V, f=10MHz SWITCHING CHARACTERISTICS Turn On time Turn Off time ton VCC=30V, IC=500mA, IB1=50mA 2N5320/5321 2N5322/5323 toff VCC=30V, IC=500mA, IB1=IB2=50mA 2N5320/5321 2N5322/5323 *Pulsed: Pulse width <300µs, duty cycle <2% MIN TYP MAX UNITS 10 30 130 40 250 0.5 V 0.8 V 0.7 V 1.2 V 1.1 V 1.4 V 5 80 ns 100 ns 800 ns 1000 ns Continental Device India Limited Data Sheet Page 2 of 4 2N5320, 2N5321 NPN 2N5322, 2N5323 PNP TO-39 Metal Can Package TO-39 Metal Can Package A B E D G 2 1 3 L H J F K C All dimensions are in mm DIM MIN MAX A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53 E - 0.88 F 2.41 2.66 G 4.82 5.33 H 0.71 0.86 J 0.73 1.02 K 12.70 - L 42 DEG 48 DEG 32 1.
