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2N5320 - SILICON POWER SWITCHING TRANSISTORS

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Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current - Continuous Base Current Power Dissipation@ Ta=25ºC Derate Above 25ºC Power Dissipation@ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC IB PD PD Tj, Tstg 2N

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Part number 2N5320
Manufacturer CDIL
File Size 63.50 KB
Description SILICON POWER SWITCHING TRANSISTORS
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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON POWER SWITCHING TRANSISTORS 2N5320, 2N5321 NPN 2N5322, 2N5323 PNP TO-39 Metal Can Package Medium Power Amplifier and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current - Continuous Base Current Power Dissipation@ Ta=25ºC Derate Above 25ºC Power Dissipation@ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC IB PD PD Tj, Tstg 2N5320 75 100 7 2N5321 2N5322 50 75 75 100 5 7 2.0 1.0 1 5.71 10 57.14 - 65 to +200 THERMAL CHARACTERISTICS Junction to Ambient in free air Junction to Case Rth (j-a) Rth (j-c) 175 17.
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