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2N5320 - Medium Power Transistors

General Description

Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current-Continuous Base Current Power Dissipation at Ta = 25°C Derate above 25°C Power Dissipation at Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Characteristics Junction to Ambie

Key Features

  • High performance, low frequency devices typically with current ratings 2A. Up to 1W power dissipation.
  • Silicon Power Switching Transistors.
  • Medium Power Amplifier and Switching.

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Datasheet Details

Part number 2N5320
Manufacturer Multicomp
File Size 303.23 KB
Description Medium Power Transistors
Datasheet download datasheet 2N5320 Datasheet

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Other Datasheets by Multicomp

Part Number Description
2N5322 Medium Power Transistors
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N5320 & 2N5322 Medium Power Transistors Features: • High performance, low frequency devices typically with current ratings 2A. Up to 1W power dissipation. • Silicon Power Switching Transistors. • Medium Power Amplifier and Switching Applications. 2N5320 NPN 2N5322 PNP TO-39 Metal Can Package Dimensions A B C D E F G H J K L Minimum 8.50 7.74 6.09 0.40 2.41 4.82 0.71 0.73 12.70 42° Maximum 9.39 8.50 6.60 0.53 0.88 2.66 5.33 0.86 1.02 48° Dimensions : Millimetres Pin Configuration 1. Emitter 2. Base 3. Collector Page 1 31/05/05 V1.