Datasheet Details
| Part number | 2N5320 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 323.56 KB |
| Description | COMPLEMENTARY NPN SILICON SWITCHING TRANSISTORS |
| Datasheet | 2N5320-CentralSemiconductor.pdf |
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Overview: 2N5320 2N5321 NPN 2N5322 2N5323 PNP COMPLEMENTARY SILICON SWITCHING TRANSISTORS w w w. c e n t r a l s e m i .
| Part number | 2N5320 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 323.56 KB |
| Description | COMPLEMENTARY NPN SILICON SWITCHING TRANSISTORS |
| Datasheet | 2N5320-CentralSemiconductor.pdf |
|
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: The CENTRAL SEMICONDUCTOR 2N5320, 2N5322 series devices are complementary silicon power transistors manufactured by the epitaxial planar process, designed for amplifier and switching applications.
MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEV VCEO VEBO IC IB PD TJ, Tstg ΘJA ΘJC 2N5320 2N5322 100 2N5321 2N5323 75 100 75 75 50 6.0 5.0 2.0 1.0 10 -65 to +200 175 17.5 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N5320 2N5322 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=80V - 0.5 ICBO VCB=60V - - IEBO VEB=5.0V - 0.1 IEBO VEB=4.0V - - BVCEV IC=100μA, VBE=1.5V 100 - BVCEO IC=10mA 75 - BVEBO IE=100μA 6.0 - VCE(SAT) IC=500mA, IB=50mA (2N5320) - 0.5 VCE(SAT) IC=500mA, IB=50mA (2N5321) - - VCE(SAT) IC=500mA, IB=50mA (2N5322) - 0.7 VCE(SAT) IC=500mA, IB=50mA (2N5323) - - VBE(ON) VCE=4.0V, IC=500mA - 1.1 hFE VCE=4.0V, IC=500mA 30 200 hFE VCE=2.0V, IC=1.0A 10 - fT VCE=4.0V, IC=50mA, f=10MHz 50 - 2N5321 2N5323 MIN MAX - - - 5.0 - - - 0.5 75 - 50 - 5.0 - - - - 0.8 - - - 1.2 - 1.4 40 250 - - 50 - UNITS V V V V A A W °C °C/W °C/W UNITS μA μA μA μA V V V V V V V V MHz R6 (28-October 2021) 2N5320 2N5321 NPN 2N5322 2N5323 PNP COMPLEMENTARY SILICON SWITCHING TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MAX ton VCC=30V, IC=500mA, IB1=50mA (2N5320, 2N5321) 80 ton VCC=30V, IC=500mA, IB1=50mA (2N5322, 2N5323) 100 toff VCC=30V, IC=500mA, IB1=IB2=50mA (2N5320, 2N5321) 800 toff VCC=30V, IC=50
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N5320 | SMALL SIGNAL NPN TRANSISTORS | STMicroelectronics |
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2N5320 | 10 Watt NPN-PNP Silicon Transistor | Fairchild Semiconductor |
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2N5320 | Medium Power Transistors | Multicomp |
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2N5320 | SILICON PLANAR EPITAXIAL NPN TRANSISTOR | TT |
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2N5320 | SILICON POWER SWITCHING TRANSISTORS | CDIL |
| Part Number | Description |
|---|---|
| 2N5321 | COMPLEMENTARY NPN SILICON SWITCHING TRANSISTORS |
| 2N5322 | COMPLEMENTARY SILICON SWITCHING TRANSISTORS |
| 2N5323 | COMPLEMENTARY PNP SILICON SWITCHING TRANSISTORS |
| 2N5306 | NPN Transistor |
| 2N5308 | NPN SILICON DARLINGTON TRANSISTOR |
| 2N5333 | PNP SILICON POWER TRANSISTOR |
| 2N5334 | NPN SILICON TRANSISTOR |
| 2N5335 | NPN SILICON TRANSISTOR |
| 2N5038 | SILICON NPN POWER TRANSISTORS |
| 2N5039 | SILICON NPN POWER TRANSISTORS |