TT 2N5320
SILICON PLANAR EPITAXIAL NPN TRANSISTOR
| Part No. | 2N5320 |
|---|---|
| Datasheet | 2N5320 Download |
| Manufacturer |  TT |
| Description | SILICON PLANAR EPITAXIAL NPN TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
● Screening Options AvailableABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 100V VCEO Collector – Emitter Voltage 75V VEBO Emitter – Base Voltage 7V IC Continuous Collector Current 2A IB Base Current 1.0A PD Total Power Dissipation at TA = 25°C 1.0W Derate Above 25°C 5.71mW/°C PD Total Power Dissipation at TC = 25°C 7W Derate Above 25°C 40mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient RθJC Thermal Resistance, Junction To Case Min. Typ. Max. Units 175 °C/W 25 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
