2N5320 - SILICON PLANAR EPITAXIAL NPN TRANSISTOR

TT Electronics

Datasheet Details

Part number	2N5320
Manufacturer	TT Electronics
File Size	112.51 KB
Description	SILICON PLANAR EPITAXIAL NPN TRANSISTOR
Datasheet	2N5320 Datasheet

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SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N5320 • Low VCE(sat), hFE 30-130 (@VCE=4V, IC=0.5A) • Hermetic TO-39 Metal package. • Ideally Suited For Medium Power Amplifier And Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 100V VCEO Collector – Emitter Voltage 75V VEBO Emitter – Base Voltage 7V IC Continuous Collector Current 2A IB Base Current 1.0A PD Total Power Dissipation at TA = 25°C 1.0W Derate Above 25°C 5.