Datasheet Details
| Part number | 2N5320 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 67.36 KB |
| Description | SMALL SIGNAL NPN TRANSISTORS |
| Datasheet | 2N5320_STMicroelectronics.pdf |
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Overview: 2N5320 2N5321 SMALL SIGNAL NPN TRANSISTORS s s s SILICON EPITAXIAL PLANAR NPN TRANSISTORS MEDIUM POWER AMPLIFIER PNP COMPLEMENTS ARE 2N5322 AND.
| Part number | 2N5320 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 67.36 KB |
| Description | SMALL SIGNAL NPN TRANSISTORS |
| Datasheet | 2N5320_STMicroelectronics.pdf |
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The 2N5320 and 2N5321 are silicon epitaxial planar NPN transistors in Jedec TO-39 metal case.
They are especially intended for high-voltage medium power application in industrial and commercial equipments.
The complementary PNP types are respectively the 2N5322 and 2N5323 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEV V CEO V EBO IC I CM IB P tot P tot T stg , T j Parameter 2N5320 Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (V BE = 1.5V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T amb = 25 C Total Dissipation at T c = 25 o C Storage and Junction Temperature o Value 2N5321 75 75 50 5 1.2 2 1 1 10 -65 to 200 100 100 75 6 Unit V V V V A A A W W o C June 1997 1/4 2N5320/2N5321 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 17.5 175 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I EBO V (BR)CEV Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (I C = 0) Collector-Emitter Breakdown Voltage (V BE = 1.5V) Test Conditions V CB = 80 V V CB = 60 V V EB = 5 V V EB = 4 V I C = 100 µ A for 2N5320 for 2N5321 I C = 10 mA for 2N5320 for 2N5321 I E = 100 µ A for 2N5320 for 2N5321 I C = 500 mA for 2N5320 for 2N5321 I C = 500 mA for 2N5320 for 2N5321 for 2N5320 I C = 500 mA IC = 1 A for 2N5321 I C = 500 mA I C = 50 mA I C = 500 mA I B1 = 50 mA I B = 50 mA 0.5 0.8 V CE = 4 V 1.1 1.4 VCE = 4 V V CE = 2 V V CE = 4 V V CE = 4 V V CC = 30 V f = 10 MHz 30 10 40 50 80 800 130 V V V V for 2N5320 for 2N5321 for 2N5320 for 2N5321 100 75 75 50 6 5 0.1 0.5 Min.
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N5320 | 10 Watt NPN-PNP Silicon Transistor | Fairchild Semiconductor |
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2N5320 | Medium Power Transistors | Multicomp |
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2N5320 | COMPLEMENTARY NPN SILICON SWITCHING TRANSISTORS | Central Semiconductor |
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2N5320 | SILICON PLANAR EPITAXIAL NPN TRANSISTOR | TT |
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2N5320 | SILICON POWER SWITCHING TRANSISTORS | CDIL |
| Part Number | Description |
|---|---|
| 2N5321 | SMALL SIGNAL NPN TRANSISTORS |
| 2N5322 | SMALL SIGNAL PNP TRANSISTORS |
| 2N5323 | SMALL SIGNAL PNP TRANSISTORS |
| 2N5038 | HIGH CURRENT NPN SILICON TRANSISTOR |
| 2N5153HR | 5A PNP Transistor |
| 2N5154HR | Hi-Rel NPN bipolar transistor |
| 2N5179 | Silicon NPN Epitaxial Transistor |
| 2N5191 | NPN power transistors |
| 2N5192 | NPN power transistors |
| 2N5195 | Low voltage PNP power transistor |