STMicroelectronics 2N7002
N-Channel MOSFET
FEATURES
Type VDSS RDS(on) max ID 2N7000 )2N7002 60 V 60 V < 5 Ω(@10V) 0.35 A < 5 Ω(@10V) 0.20 A t(s● Low Qg uc● Low threshold drive rodApplication te P● Switching applications oleDescription bsThis Power MOSFET is the second generation of OSTMicroelectronics unique “single feature size” -strip-based process. The resulting transistor )shows extremely high packing density for low ont(sresistance, rugged avalanche characteristics and cless critical alignment steps therefore a uremarkable manufacturing reproducibility. 3 2 1 SOT23-3L TO-92 Figure 1. Internal schematic diagram Obsolete Prod SOT23-3L TO-92 Table 1. Device summary Order codes 2N7000 2N7002 Marking 2N7000G ST2N Package TO-92 SOT23-3L Packaging Bulk Tape and reel November 2008 Rev 9 1/14 14 Contents Contents 2N7000, 2N7002 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . .