2STC4467 Description
2STC4467 High power NPN epitaxial planar bipolar transistor.
2STC4467 Key Features
- High breakdown voltage VCEO = 120 V
- plementary to 2STA1694
- Fast-switching speed
2STC4467 is High power NPN epitaxial planar bipolar transistor manufactured by STMicroelectronics .
| Part Number | Description |
|---|---|
| 2STC4468 | High power NPN epitaxial planar bipolar transistor |
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| 2STC5242 | High power NPN epitaxial planar bipolar transistor |
| 2STC5948 | High power NPN epitaxial planar bipolar transistor |
2STC4467 High power NPN epitaxial planar bipolar transistor.