2STC4467
Overview
- High breakdown voltage VCEO = 120 V
- Complementary to 2STA1694
- Fast-switching speed t(s)
- Typical ft = 20 MHz c
- Fully characterized at 125 oC roduApplications P
- Audio power amplifier leteDescription soThe device is a NPN transistor manufactured busing new BiT-LA (Bipolar transistor for linear Oamplifier) technology. The resulting transistor Obsolete Product(s) -shows good gain linearity behaviour. 3 2 1 TO-3P Figure
- Internal schematic diagram Table
- Device summary Order code Marking Package Packaging 2STC4467 2STC4467 TO-3P Tube February 2009 Rev 3 1/8 8 Electrical ratings 1 Electrical ratings 2STC4467 Table
- Absolute maximum ratings Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) 120 V VCEO Collector-emitter voltage (IB = 0) 120 V VEBO Emitter-base voltage (IC = 0) 6V IC Collector current 8A ICM )PTOT t(sTstg cTJ Collector peak current (tP < 5 ms) Total dissipation at Tc = 25 °C Storage temperature Max. operating junction temperature roduTable
- Thermal data PSymbol Parameter Obsolete Product(s) - ObsoleteRthj-case Thermal resistance junction-case __max
