2STC4467 Overview
2STC4467 High power NPN epitaxial planar bipolar transistor.
2STC4467 Key Features
- High breakdown voltage VCEO = 120 V
- plementary to 2STA1694
- Fast-switching speed
| Part number | 2STC4467 |
|---|---|
| Datasheet | 2STC4467_STMicroelectronics.pdf |
| File Size | 130.11 KB |
| Manufacturer | STMicroelectronics |
| Description | High power NPN epitaxial planar bipolar transistor |
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2STC4467 High power NPN epitaxial planar bipolar transistor.
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