Datasheet4U Logo Datasheet4U.com

2STC4467 - High power NPN epitaxial planar bipolar transistor

Datasheet Summary

Description

soThe device is a NPN transistor manufactured busing new BiT-LA (Bipolar transistor for linear Oamplifier) technology.

The resulting transistor Obsolete Product(s) -shows good gain linearity behaviour.

Figure 1.

Features

  • High breakdown voltage VCEO = 120 V.
  • Complementary to 2STA1694.
  • Fast-switching speed t(s).
  • Typical ft = 20 MHz c.
  • Fully characterized at 125 oC rodu.

📥 Download Datasheet

Datasheet preview – 2STC4467

Datasheet Details

Part number 2STC4467
Manufacturer STMicroelectronics
File Size 130.11 KB
Description High power NPN epitaxial planar bipolar transistor
Datasheet download datasheet 2STC4467 Datasheet
Additional preview pages of the 2STC4467 datasheet.

📁 Similar Datasheet

  • 2ST1480 - (2ST1480 / 2ST2480) Complementary power transistors (ST Microelectronics)
  • 2ST2480 - (2ST1480 / 2ST2480) Complementary power transistors (ST Microelectronics)
  • 2ST31A - NPN Transistor (INCHANGE)
  • 2ST501T - NPN Transistor (INCHANGE)
  • 2STA1695 - High power PNP epitaxial planar bipolar transistor (ST Microelectronics)
  • 2STA1962 - High power PNP epitaxial planar bipolar transistor (ST Microelectronics)
  • 2STBN15D100 - NPN Transistor (ST Microelectronics)
  • 2STD1665 - Low voltage fast-switching NPN power transistor (ST Microelectronics)
  • 2STD1665 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • 2STF1360 - Low voltage fast-switching NPN power transistors (ST Microelectronics)
Other Datasheets by STMicroelectronics
  • 2STC4468 - High power NPN epitaxial planar bipolar transistor
  • 2STC2510 - High power NPN epitaxial planar bipolar transistor
  • 2STC5200 - High power NPN epitaxial planar bipolar transistor
  • 2STC5242 - High power NPN epitaxial planar bipolar transistor
  • 2STC5948 - High power NPN epitaxial planar bipolar transistor
  • 2STC5949 - High power NPN epitaxial planar bipolar transistor
  • 2ST15300 - Rad-Hard NPN bipolar transistors
  • 2ST2121 - High power PNP epitaxial planar bipolar transistor

Full PDF Text Transcription

Click to expand full text
2STC4467 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = 120 V ■ Complementary to 2STA1694 ■ Fast-switching speed t(s)■ Typical ft = 20 MHz c■ Fully characterized at 125 oC roduApplications P■ Audio power amplifier leteDescription soThe device is a NPN transistor manufactured busing new BiT-LA (Bipolar transistor for linear Oamplifier) technology. The resulting transistor Obsolete Product(s) -shows good gain linearity behaviour. 3 2 1 TO-3P Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking Package Packaging 2STC4467 2STC4467 TO-3P Tube February 2009 Rev 3 1/8 www.st.com 8 Electrical ratings 1 Electrical ratings 2STC4467 Table 2.
Published: |