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2STC4468 - High power NPN epitaxial planar bipolar transistor

Datasheet Summary

Description

The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology.

The resulting transistor shows good gain linearity behaviour.

Recommended for 70W to 100W high fidelity audio frequency amplifier output stage.

Features

  • Preliminary data High breakdown voltage VCEO=140V Complementary to 2STA1695 Fast-switching speed Typical ft =20MHz Fully characterized at 125 oC 3 2 1.

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Datasheet Details

Part number 2STC4468
Manufacturer STMicroelectronics
File Size 248.23 KB
Description High power NPN epitaxial planar bipolar transistor
Datasheet download datasheet 2STC4468 Datasheet
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2STC4468 www.datasheet4u.com High power NPN epitaxial planar bipolar transistor General features ■ ■ ■ ■ ■ Preliminary data High breakdown voltage VCEO=140V Complementary to 2STA1695 Fast-switching speed Typical ft =20MHz Fully characterized at 125 oC 3 2 1 Applications ■ Audio power amplifier TO-3P Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Recommended for 70W to 100W high fidelity audio frequency amplifier output stage. Internal schematic diagram Order codes Part Number 2STC4468 Marking 2STC4468 Package TO-3P Packaging Tube Electrical ratings June 2007 Rev 1 1/9 www.st.
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