STMicroelectronics 2STR2160
The device in a PNP transistor manufactured using new “PB-HCD” (power bipolar E (2) high current density) technology. The resulting transistor shows exceptional high gain PNPB1C3E2 performances coupled with very low saturation voltage.| Part No. | 2STR2160 |
|---|---|
| Datasheet | 2STR2160 Download |
| Manufacturer |  STMicroelectronics |
| Description | Low voltage fast-switching PNP power transistor |
| Buy | Stock & Price |
FEATURES
3 2 1 SOT-23● Very low collector-emitter saturation voltage
● High current gain characteristic
● Fast switching speed
● Miniature SOT-23 plastic package for surface mounting circuits
APPLICATIONS
C (3) B (1)● Led
● Battery charger
● Motor and relay driver
● Voltage regulation
DESCRIPTION
The complementary NPN is the 2STR1160. Product status link 2STR2160 Product summary Order code 2STR2160 Marking 2160 Package SOT-23 Packing Tape and reel DS5868 - Rev 4 - February 2025 For further information, contact your local STMicroelectronics sales office. 1 Electrical ratings Symbol VEBO VCBO VCEO IC ICM PTOT Tstg TJ Table 1. Absolute maximum rating Parameter Emitter-base voltage (IC = 0 A) Collector-base voltage (IE = 0 A) Collector-emitter voltage (IB = 0 A) Collector current Collector peak current (tp < 5 ms) Total power dissipation at TA = 25 °C Storage temperature range Maximum operating junction temperature Table 2. Thermal data Symbol Parameter RthJA(1) Thermal resistance, junction-to-ambient 1.
