2STR2160 Description
The device in a PNP transistor manufactured using new “PB-HCD” (power bipolar E (2) high current density) technology. The resulting transistor shows exceptional high gain PNPB1C3E2 performances coupled with very low saturation voltage. The plementary NPN is the 2STR1160.
2STR2160 Key Features
- Very low collector-emitter saturation voltage
- High current gain characteristic
- Fast switching speed
- Miniature SOT-23 plastic package for surface mounting circuits