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300NH02L - N-channel Power MOSFET

General Description

This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics’ unique “single feature size” strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility.

Key Features

  • Order code STV300NH02L VDSS 24 V RDS(on) max 0.001 Ω ID 200 A(1) 1. This value is limited by package.
  • RDS(on).
  • Qg industry’s benchmark.
  • Conduction losses reduced.
  • Low profile, very low parasitic inductance.
  • Switching losses reduced.

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Other Datasheets by STMicroelectronics

Part Number Description
300NH02L-6 N-channel Power MOSFET

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STV300NH02L N-channel 24 V, 0.8 mΩ typ., 200 A STripFET™ III Power MOSFET in a PowerSO-10 package Datasheet — production data Features Order code STV300NH02L VDSS 24 V RDS(on) max 0.001 Ω ID 200 A(1) 1. This value is limited by package ■ RDS(on)*Qg industry’s benchmark ■ Conduction losses reduced ■ Low profile, very low parasitic inductance ■ Switching losses reduced Applications ■ Switching applications – OR-ing ■ Specially designed and optimized for high efficiency DC/DC converters. Description This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics’ unique “single feature size” strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility.