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40DN3LH5 - Dual N-channel Power MOSFET

Description

This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology.

The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.

Table 1.

Features

  • Order code STL40DN3LLH5 VDS 30 V RDS(on) max. ID 0.018 Ω 40 A Figure 1. Internal schematic diagram.
  • AEC-Q101 qualified.
  • Low on-resistance.
  • High avalanche ruggedness.
  • Low gate drive power loss.
  • Wettable flank package.

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STL40DN3LLH5 Automotive-grade dual N-channel 30 V, 0.016 Ω typ., 40 A STripFET™ H5 Power MOSFET in a PowerFLAT™ 5x6 DI package Datasheet - production data Features Order code STL40DN3LLH5 VDS 30 V RDS(on) max. ID 0.018 Ω 40 A Figure 1. Internal schematic diagram • AEC-Q101 qualified • Low on-resistance • High avalanche ruggedness • Low gate drive power loss • Wettable flank package Applications • Switching applications Description This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class. Order code STL40DN3LLH5 Table 1.
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