40N10F7 Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STL40N10F7 Table 1: Device summary Marking Package 40N10F7 PowerFLATTM 5x6 Packing Tape and reel February 2016 DocID024671 Rev 4 This is information on a product in...
40N10F7 Key Features
- Among the lowest RDS(on) on the market
- Excellent figure of merit (FoM)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness