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40N90K5 - N-channel Power MOSFET

General Description

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key Features

  • Order code STW40N90K5 STWA40N90K5 VDS 900 V RDS(on) max 0.099 Ω ID 40 A.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best FoM (figure of merit).
  • Ultra-low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STW40N90K5, STWA40N90K5 N-channel 900 V, 0.088 Ω typ., 40 A MDmesh™ K5 Power MOSFETs in TO-247 and TO-247 long leads packages Datasheet - production data Figure 1: Internal schematic diagram Features Order code STW40N90K5 STWA40N90K5 VDS 900 V RDS(on) max 0.099 Ω ID 40 A  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100% avalanche tested  Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.