48N60M2 Description
This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. STW48N60M2-4 Electrical ratings 1 Electrical ratings Table.
48N60M2 Key Features
- Excellent switching performance thanks to the extra driving source pin
- Extremely low gate charge
- Excellent output capacitance (Coss) profile
- 100% avalanche tested
- Zener-protected