4NB80 Datasheet | STMicroelectronics

® .. STB4NB80 - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FP Power MESH™ MOSFET PRELIMINARY DATA V DSS 800 V 800 V R DS(on) 3.3 Ω 3.3 Ω ID 4A 4A TYPE STB4NB80 STB4NB80FP s s s s s TYPICAL RDS(on) = 3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 1 D2PAK TO-263 (Suffix "T4") 3 12 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the pany’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE s I2PAK TO-262 (Suffix "-1") INTERNAL SCHEMATIC...