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56N3LH5 - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology.

The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.

Table 1.

Key Features

  • 1 2 3 4 PowerFLAT™ 5x6 Order code STL56N3LLH5 VDS 30 V RDS(on) max 0.009 Ω.
  • Low on-resistance RDS(on).
  • High avalanche ruggedness.
  • Low gate drive power loss ID 56 A.

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Full PDF Text Transcription for 56N3LH5 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 56N3LH5. For precise diagrams, and layout, please refer to the original PDF.

STL56N3LLH5 N-channel 30 V, 0.0076 Ω typ., 56 A STripFET™ H5 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet — production data Features 1 2 3 4 PowerFLAT™ 5x6 Order co...

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e Datasheet — production data Features 1 2 3 4 PowerFLAT™ 5x6 Order code STL56N3LLH5 VDS 30 V RDS(on) max 0.009 Ω • Low on-resistance RDS(on) • High avalanche ruggedness • Low gate drive power loss ID 56 A Applications • Switching applications Figure 1. Internal schematic diagram '  Description This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class. *  6  $0Y Order code STL56N3LLH5 Table 1.

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