56N60M2 Datasheet | STMicroelectronics

Features Order code VDS at TJ max. STW56N60M2 650 V - Extremely low gate charge - Excellent output capacitance (Coss) profile - 100% avalanche tested - Zener-protected RDS(on) max. 55 mΩ ID 52 A Applications - Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STW56N60M2 Product summary Order code STW56N60M2 Marking Package TO-247 Packing Tube DS10753 - Rev 3 - August 2022 For further information contact your local STMicroelectronics sales office. .st. STW56N60M2 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100...