Datasheet4U Logo Datasheet4U.com

56N60M2 - N-channel Power MOSFET

Datasheet Summary

Description

This device is an N-channel Power MOSFET developed using MDmesh M2 technology.

Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Features

  • Order code VDS at TJ max. STW56N60M2 650 V.
  • Extremely low gate charge.
  • Excellent output capacitance (Coss) profile.
  • 100% avalanche tested.
  • Zener-protected RDS(on) max. 55 mΩ ID 52 A.

📥 Download Datasheet

Datasheet preview – 56N60M2

Datasheet Details

Part number 56N60M2
Manufacturer STMicroelectronics
File Size 422.15 KB
Description N-channel Power MOSFET
Datasheet download datasheet 56N60M2 Datasheet
Additional preview pages of the 56N60M2 datasheet.

📁 Similar Datasheet

  • 56NDD - Diode-Diode (Naina Semiconductor)
  • 56NT - Silicon Controlled Rectifiers (Naina Semiconductor)
  • 56NT100 - Phase Control Thyristors (Naina Semiconductor)
  • 56NT120 - Phase Control Thyristors (Naina Semiconductor)
  • 56NT160 - Phase Control Thyristors (Naina Semiconductor)
  • 56NT20 - Phase Control Thyristors (Naina Semiconductor)
  • 56NT40 - Phase Control Thyristors (Naina Semiconductor)
  • 56NT60 - Phase Control Thyristors (Naina Semiconductor)
  • 56NT80 - Phase Control Thyristors (Naina Semiconductor)
  • 56NTD - Thyristor-Diode (Naina Semiconductor)
Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text
STW56N60M2 Datasheet N-channel 600 V, 45 mΩ typ., 52 A MDmesh M2 Power MOSFET in a TO-247 package 3 2 1 TO-247 D(2, TAB) G(1) S(3) AM01476v1_tab Features Order code VDS at TJ max. STW56N60M2 650 V • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected RDS(on) max. 55 mΩ ID 52 A Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
Published: |