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STF5N52U
Datasheet
N-channel 525 V, 1.25 Ω typ., 4.4 A, UltraFASTmesh™ Power MOSFET in a TO-220FP package
Features
Order code
VDS
RDS(on) max.
ID
PTOT
ct(s) 2 3
1
du TO-220FP ro D(2)
STF5N52U
525 V
• Outstanding dv/dt capability • Gate charge minimized • Very low intrinsic capacitances • Very low RDS(on) • Extremely low trr
1.50 Ω
4.4 A
25 W
te P Applications le • Switching applications o G(1)
bs Description
- O This device is N-channel Power MOSFET developed using UltraFASTmesh™
) technology, which combines the advantages of reduced on resistance, Zener gate
t(s S(3)
AM15572v1_no_tab protection and very high dv/dt capability with an enhanced fast body-drain recovery
diode.