Datasheet4U Logo Datasheet4U.com

60N3LH5 - N-channel Power MOSFET

General Description

This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM.

Figure 1.

Table 1.

Key Features

  • Type STD60N3LH5 STP60N3LH5 STU60N3LH5 VDSS 30 V 30 V 30 V RDS(on) max 0.008 Ω 0.0084 Ω 0.0084 Ω ID 48 A 48 A 48 A.
  • RDS(on).
  • Qg industry benchmark.
  • Extremely low on-resistance RDS(on).
  • Very low switching gate charge.
  • High avalanche ruggedness.
  • Low gate drive power losses.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
60N321 GT60N321 Toshiba Semiconductor
60N323 Silicon N-Channel IGBT Toshiba
60N03 Power MOSFET Tuofeng Semiconductor
60N03 N-Channel MOSFET Anachip
60N03 N-Channel MOSFET Cmos

Other Datasheets by STMicroelectronics

Part Number Description
60N03L-10 N-CHANNEL Power MOSFET
60NF10 N-CHANNEL Power MOSFET
60NM50N N-channel Power MOSFET
60NM60 STY60NM60

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STD60N3LH5 STP60N3LH5, STU60N3LH5 N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, TO-220 STripFET™ V Power MOSFET Features Type STD60N3LH5 STP60N3LH5 STU60N3LH5 VDSS 30 V 30 V 30 V RDS(on) max 0.008 Ω 0.0084 Ω 0.0084 Ω ID 48 A 48 A 48 A ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses Application ■ Switching applications Description This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM. 3 2 1 TO-220 3 1 DPAK 3 2 1 IPAK Figure 1. Internal schematic diagram Table 1.