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STN6N60M2
N-channel 600 V, 1.00 Ω typ., 5.5 A MDmesh M2 Power MOSFET in an SOT223-2 package
3 2
1
SOT223-2
Features
Order code
VDS
STN6N60M2
600 V
• Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected
RDS(on) max. 1.25 Ω
ID 5.5 A
D(3)
Applications
• Switching applications
G(1)
Description
This device is an N-channel Power MOSFET developed using MDmesh M2
technology. Thanks to its strip layout and an improved vertical structure, the device
exhibits low on-resistance and optimized switching characteristics, rendering it
S(2)
NG1D3S2_SOT223 suitable for the most demanding high efficiency converters.