The 74V1G07 is an advanced high-speed CMOS SINGLE BUFFER (OPEN DRAIN) fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology.
The internal circuit is composed of 2 stages including buffer output, which provide high noise immunity and stable output.
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74V1G07
SINGLE BUFFER (OPEN DRAIN)
PRELIMINARY DATA
s s
s
s s
s
HIGH SPEED: tPD = 6.1 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA = 25 oC HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUT OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 5.5V IMPROVED LATCH-UP IMMUNITY
S (SOT23-5L)
C (SC-70)
ORDER CODE: 74V1G07S 74V1G07C Power down protection is provided on input and 0 to 7V can be accepted on input with no regard to the supply voltage. This device can be used to interface 5V to 3V.
DESCRIPTION The 74V1G07 is an advanced high-speed CMOS SINGLE BUFFER (OPEN DRAIN) fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology.
74V1G07 Datasheet
