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7NM60N - N-channel Power MOSFET

General Description

- O This device is an N-channel Power MOSFET ) developed using the second generation of t(s MDmesh™ technology.

This revolutionary Power c MOSFET associates a vertical structure to the u company’s strip layout to yield one of the world’s d lowest on-resistance and gate charge.

Key Features

  • Order code STL7NM60N VDSS @ TJMAX 650 V RDS(on) max. < 0.90 Ω ID 5.8 A(1) t(s) 1. The value is rated according Rthj-case c.
  • 100% avalanche tested u.
  • Low input capacitance and gate charge rod.
  • Low gate input resistance te P.

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STL7NM60N N-channel 600 V, 0.805 Ω, 5.8 A PowerFLAT™ 5x5 MDmesh™ II Power MOSFET Features Order code STL7NM60N VDSS @ TJMAX 650 V RDS(on) max. < 0.90 Ω ID 5.8 A(1) t(s) 1. The value is rated according Rthj-case c ■ 100% avalanche tested u ■ Low input capacitance and gate charge rod ■ Low gate input resistance te P Application le ■ Switching applications bso Description - O This device is an N-channel Power MOSFET ) developed using the second generation of t(s MDmesh™ technology. This revolutionary Power c MOSFET associates a vertical structure to the u company’s strip layout to yield one of the world’s d lowest on-resistance and gate charge. It is ro therefore suitable for the most demanding high Obsolete P efficiency converters. 87 5 11 4 12 14 1 PowerFLAT™ 5x5 Figure 1.