7NM60N Description
O This device is an N-channel Power MOSFET ) developed using the second generation of t(s MDmesh™ technology. This revolutionary Power c MOSFET associates a vertical structure to the u pany’s strip layout to yield one of the world’s d lowest on-resistance and gate charge. It is ro therefore suitable for the most demanding high Obsolete P efficiency converters.
7NM60N Key Features
- 100% avalanche tested u
- Low input capacitance and gate charge rod
- Low gate input resistance
- Switching
7NM60N Applications
- O This device is an N-channel Power MOSFET ) developed using the second generation of t(s MDmesh™ technology. This revolutionary Power c MOSFET associates a ver