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7NM60-Q - N-CHANNEL MOSFET

General Description

The UTC 7NM60-Q is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics.

This power MOSFET is usually used at DC-DC, AC-DC converters for power applications.

Key Features

  • S.
  • RDS(ON) < 1.1Ω @ VGS = 10V, ID =3.5A.
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 7NM60-Q Preliminary 7.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 7NM60-Q is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications.  FEATURES * RDS(ON) < 1.1Ω @ VGS = 10V, ID =3.