Datasheet4U Logo Datasheet4U.com

8N90K5 - N-channel Power MOSFET

Datasheet Summary

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Features

  • Order code STW8N90K5 VDS 900 V RDS(on) max. 0.68 Ω ID 8A.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best FoM (figure of merit).
  • Ultra-low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

📥 Download Datasheet

Datasheet preview – 8N90K5

Datasheet Details

Part number 8N90K5
Manufacturer STMicroelectronics
File Size 723.24 KB
Description N-channel Power MOSFET
Datasheet download datasheet 8N90K5 Datasheet
Additional preview pages of the 8N90K5 datasheet.

📁 Similar Datasheet

  • 8N90 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 8N90 - 900V N-CHANNEL MOSFET (Unisonic Technologies)
  • 8N90-FC - N-CHANNEL POWER MOSFET (UTC)
  • 8N90A - N-Channel MOSFET (INCHANGE)
Other Datasheets by STMicroelectronics

    Full PDF Text Transcription

    Click to expand full text
    STW8N90K5 N-channel 900 V, 0.60 Ω typ., 8 A MDmesh™ K5 Power MOSFET in a TO-247 package Datasheet - production data 3 2 1 TO-247 Figure 1: Internal schematic diagram D(2) G(1) Features Order code STW8N90K5 VDS 900 V RDS(on) max. 0.68 Ω ID 8A  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100% avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
    Published: |