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9N150 Datasheet N-channel MOSFET

Manufacturer: STMicroelectronics

Overview: STW9N150 N-channel 1500 V - 1.8 Ω - 8 A - TO-247 very high voltage PowerMESH™ Power.

General Description

Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances.

The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.

3 2 1 TO-247 Figure 1.

Key Features

  • Type STW9N150 VDSS 1500 V RDS(on) < 2.5 Ω.
  • 100% avalanche tested.
  • Avalanche ruggedness.
  • Gate charge minimized.
  • Very low intrinsic capacitances.
  • High speed switching.
  • Very low on-resistance ID Pw 8 A 320 W.

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