9N150
Features
Type STW9N150
VDSS 1500 V
RDS(on) < 2.5 Ω
- 100% avalanche tested
- Avalanche ruggedness
- Gate charge minimized
- Very low intrinsic capacitances
- High speed switching
- Very low on-resistance
ID Pw 8 A 320 W
Application
- Switching applications
Description
Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the pany’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.
3 2 1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary Order code STW9N150
Marking 9N150
Package TO-247
Packaging Tube
January 2008
Rev 2
1/12
.st.
Contents
Contents
STW9N150
Electrical ratings
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Electrical characteristics
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