Datasheet4U Logo Datasheet4U.com

9NK60Z - N-Channel MOSFET

General Description

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout.

Key Features

  • Order codes STB9NK60ZT4 STP9NK60Z STP9NK60ZFP VDS RDS(on) max ID PTOT 600 V 125 W 0.95 Ω 7 A 30 W.
  • Extremely high dv/dt capability.
  • Improved ESD capability.
  • 100% avalanche tested.
  • Gate charge minimized.
  • Very low intrinsic capacitances TAB 3 1 D2PAK TAB 3 2 1 TO-220 3 2 1 TO-220FP.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by STMicroelectronics

Part Number Description
9NK50ZFP STP9NK50ZFP

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STB9NK60Z, STP9NK60Z, STP9NK60ZFP N-channel 600 V, 0.85 Ω typ., 7 A Zener-protected SuperMESH™ Power MOSFET in D²PAK, TO-220 and TO-220FP packages Datasheet − production data Features Order codes STB9NK60ZT4 STP9NK60Z STP9NK60ZFP VDS RDS(on) max ID PTOT 600 V 125 W 0.95 Ω 7 A 30 W ■ Extremely high dv/dt capability ■ Improved ESD capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances TAB 3 1 D2PAK TAB 3 2 1 TO-220 3 2 1 TO-220FP Applications ■ Switching applications Figure 1. Internal schematic diagram , TAB Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout.