AM0912-080
AM0912-080 is AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS manufactured by STMicroelectronics.
DESCRIPTION
The AM0912-080 Avionics power transistor is a broadband, high peak pulse power device specifically designed for avionics applications requiring broad bandwidth with moderate duty cycle and pulse width constraints such as ground/ship based DME/TACAN. This device is also designed for specialized applications including JTIDS where reduced power provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles. The AM0 912-08 0 is ho used in the unique AMPAC™ Hermetic Metal/Ceramic package with internal Input/Output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter
PIN CONNECTION
1. Collector 2. Base
3. Emitter 4. Base
Value
Unit
PDISS IC VCC TJ TSTG
Power Dissipation- Device Current-
(TC ≤100˚C)
220 7.0 50 250
- 65 to +200
W A V °C °C
Collector-Supply Voltage- Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance- 0.80 °C/W
- Applies only to rated RF amplifier operation
September 1992
1/3
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVEBO BVCER ICBO h FE DYNAMIC
Symbol
IC = 40m A IE = 10m A IC = 40m A VCB = 50V VCE = 5V
IE = 0m A IC = 0m A RBE = 10Ω IC = 2A
65 3.0 65
- 20
- -
- -
- -
- - 12 120
V V V m A
- Test Conditions
Value Min. Typ. Max.
Unit
POUT ηc GP
Note: f = 960
- 1215MHz f = 960
- 1215MHz f = 960
- 1215MHz =...