STMicroelectronics AM0912-300
The AM0912-300 avionics power transistor is a broadband, high peak pulse power device specifically designed for avionics applications requiring broad bandwidth with moderate duty cycle and pulse width constraints such as ground/ship based DME/TACAN. The AM0912-300 is also designed for specialized applications where reduced power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles. This device is capable of withstanding 15:1 VSWR mismatch load condition at any phase angle under full rated conditions.| Part No. | AM0912-300 |
|---|---|
| Datasheet | AM0912-300 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF & MICROWAVE TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
. . . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 300 W MIN. WITH 7.0 dB GAIN BANDWIDTH 255 MHz .400 x .500 2LFL (S038) hermetically sealed ORDER CODE AM0912-300 BRANDING 0912-300DESCRIPTION
The AM0912-300 is housed in the unique BIGPAC™ Hermetic Metal/Ceramic package with internal Input/Output matching structures.ABSOLUTE MAXIMUM RATINGS
(T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PIN CONNECTION PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 100°C) 940 24 50 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.16 °C/W *Applies only to rated RF amplifier operation September 1992 1/6 AM0912-300ELECTRICAL SPECIFICATIONS
(T case = 25 ° C) STATIC Symbol Test Conditions Valu e Min.
