AM0912-300 Datasheet | STMicroelectronics

DESCRIPTION The AM0912-300 avionics power transistor is a broadband, high peak pulse power device specifically designed for avionics applications requiring broad bandwidth with moderate duty cycle and pulse width constraints such as ground/ship based DME/TACAN. The AM0912-300 is also designed for specialized applications where reduced power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles. This device is capable of withstanding 15:1 VSWR mismatch load condition at any phase angle under full rated conditions. The AM0912-300 is housed in the unique BIGPAC™ Hermetic Metal/Ceramic package with internal Input/Output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PIN CONNECTION PDISS IC VCC TJ T STG Power Dissipation- Device Current- (TC ≤ 100°C) 940 24 50 250 - 65 to +200 W A V °C °C Collector-Supply Voltage- Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance- 0.16 °C/W - Applies only to rated RF amplifier operation September 1992 1/6 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Valu e Min. Typ. Max. Unit BVCBO BVEBO BVCER ICES h FE DYNAMIC Symbol IC = 50m A IE = 15m A IC = 50m A VCE = 50V VCE = 5V IE = 0m A IC = 0m A RBE = 10 Ω IC = 5A 65 3.0 65 - 10 - - - - - - - 30 - V V V m A - Test Conditions Value Min. Typ. Max. Unit POUT ηc GP Note: f = 960 - 1215MHz f = 960 - 1215MHz f = 960 - 1215MHz = = 10 µ Sec 10% PIN = 60W PIN = 60W PIN = 60W VCC = 50V VCC = 50V VCC =...