STMicroelectronics AM1011-070
The AM1011-070 device is a high power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding severe output VSWR at rated RF conditions. The AM1011-070 is supplied in the AMPAC™ Hermetic Metal/Ceramic package with internal Input/Output matching structures.| Part No. | AM1011-070 |
|---|---|
| Datasheet | AM1011-070 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS |
| Buy | Stock & Price |
APPLICATIONS
....... REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 70 W MIN. WITH 6.7 dB GAIN .400 x .400 2NLFL (S042) hermeticaly sealed ORDER CODE AM1011-70 BRANDING 1011-70DESCRIPTION
Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. PIN CONNECTION 1. Collector 2. Base 3. Emitter 4. BaseABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C) Symb ol PDISS IC VCC TJ TSTG Pa ra met er Power Dissipation* (TC ≤ 100°C) Device Current* Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* *Applies only to rated RF amplifier operation Value 200 8.0 32 250 − 65 to +200 Unit W A V °C °C 0.68 °C/W September 1992 1/4 AM1011-070ELECTRICAL SPECIFICATIONS
(Tcase = 25°C) STATIC Symb o l Test Conditions BVCBO BVEBO BVCER ICES hFE IC = 25mA IE...
