STMicroelectronics AM1011-075
The AM1011-075 device is a high power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding 10:1 output VSWR at rated RF conditions. The AM1011-075 is supplied in the AMPAC™ Hermetic M etal/Ceramic package with i nternal Input/Output matching structures.| Part No. | AM1011-075 |
|---|---|
| Datasheet | AM1011-075 Download |
| Manufacturer |  STMicroelectronics |
| Description | L-BAND AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
. . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 10:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 75 W MIN. WITH 9.2 dB GAIN .400 x .400 2LFL (S036) hermetically sealed ORDER CODE AM1011-075 BRANDING 1011-75DESCRIPTION
Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.ABSOLUTE MAXIMUM RATINGS
(T case = 25 ° C) Symbol Parameter PIN CONNECTION 1. Collector 2. Base 3. Emitter 4. Base Value Unit PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 100°C) 175 5.4 55 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.86 °C/W *Applies only to rated RF amplifier operation September 1992 1/4 AM1011-075ELECTRICAL SPECIFICATIONS
(T case = 25 ° C) STATIC Symbol Test Conditions Valu e Min.
