Datasheet Details
| Part number | AM1011-075 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 64.38 KB |
| Description | L-BAND AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS |
| Datasheet | AM1011-075_STMicroelectronics.pdf |
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Overview: AM1011-075 RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS . . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 10:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 75 W MIN. WITH 9.2 dB GAIN .400 x .
| Part number | AM1011-075 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 64.38 KB |
| Description | L-BAND AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS |
| Datasheet | AM1011-075_STMicroelectronics.pdf |
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The AM1011-075 device is a high power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications.
This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding 10:1 output VSWR at rated RF conditions.
Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.
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