Datasheet4U Logo Datasheet4U.com

AM1011-075 - L-BAND AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS

General Description

The AM1011-075 device is a high power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AM101 1.0 AMPERE SILICON MINIATURE SINGLE-PHASE BRIDGES PAN JIT
AM101 1.0 TO 1.5 AMPERE SILICON MINIATURE SINGLE-PHASE BRIDGE TRSYS
AM101 Silicon Miniature Single-Phase Bridge Comchip Technology
AM1010 1.0 TO 1.5 AMPERE SILICON MINIATURE SINGLE-PHASE BRIDGE TRSYS
AM1010 Silicon Miniature Single-Phase Bridge Comchip Technology

Other Datasheets by STMicroelectronics

Part Number Description
AM1011-070 RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS
AM1011-300 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
AM1011-400 L-BAND AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS
AM1011-500 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
AM1214-100 L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AM1011-075 RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS . . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 10:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 75 W MIN. WITH 9.2 dB GAIN .400 x .400 2LFL (S036) hermetically sealed ORDER CODE AM1011-075 BRANDING 1011-75 DESCRIPTION The AM1011-075 device is a high power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding 10:1 output VSWR at rated RF conditions.