AM83135-001 - RF & MICROWAVE TRANSISTORS

Datasheet Summary

Description

The AM83135-001 device is a medium power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed driver applications.

This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and can withstand a 10:1 output VSWR.

STMicroelectronics

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Datasheet Details

Part number	AM83135-001
Manufacturer	STMicroelectronics
File Size	78.97 KB
Description	RF & MICROWAVE TRANSISTORS
Datasheet	AM83135-001 Datasheet
Additional preview pages of the AM83135-001 datasheet.

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Full PDF Text Transcription

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AM83135-001 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . . . . . REFRACTORY/GOLD METALL IZATION EMITTER SITE BALLASTED 10:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 1.0 W MIN. WITH 5.2 dB GAIN .400 x .400 2NLF L (S042) hermetically sealed O RDER CODE AM83135-001 BRANDING 83135-1 DESCRIPTION The AM83135-001 device is a medium power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and can withstand a 10:1 output VSWR.

Published: Mar 26, 2005 |