AM83135-001 Datasheet PDF | STMicroelectronics

STMicroelectronics AM83135-001

The AM83135-001 device is a medium power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and can withstand a 10:1 output VSWR. The AM83135-001 is supplied int the AMPAC™ Hermet ic/Ceramic package with internal Input/Output impedance matching circuitry, and is intended for military and other high reliability apABSOLUTE MAXIMUM RATINGS (T case = 25°C) Symbol Parameter PIN CONNECTION 1.

Part No.	AM83135-001
Datasheet	AM83135-001 Download
Manufacturer	STMicroelectronics
Description	RF & MICROWAVE TRANSISTORS
Buy	Stock & Price

APPLICATIONS

. . . . . . . . REFRACTORY/GOLD METALL IZATION EMITTER SITE BALLASTED 10:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 1.0 W MIN. WITH 5.2 dB GAIN .400 x .400 2NLF L (S042) hermetically sealed O RDER CODE AM83135-001 BRANDING 83135-1

DESCRIPTION

Low RF thermal resistance, refractory/gold metallization, and automatic wire bonding techniques ensure high reliability and product consistency. Collector 2. Base 3. Emitter 4. Base Value Un it PDISS IC VCC TJ TSTG Power Dissipation* Device Current* (TC ≤100 °C) 11.5 0.45 34 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA Junction-Case Thermal Resistance* RTH(j-c) *Applies only to rated RF amplifier operation 13.0 °C/W February 3, 1997 1/5 AM83135-001

ELECTRICAL SPECIFICATIONS

(T case = 25° C) STATIC Symb ol Test Con ditio ns Value Min. T yp. Max. Unit BVCBO BVEBO BVCER ICES hFE...