AM83135-005 Datasheet PDF | STMicroelectronics

STMicroelectronics AM83135-005

The AM83135-005 device is a medium power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths. The AM83135-005 is supplied in the AMPAC™ Hermetic Metal/Ceramic package with internal Input/Output matching circuitry, and is intended for military and other high reliability applications.

Part No.	AM83135-005
Datasheet	AM83135-005 Download
Manufacturer	STMicroelectronics
Description	RF & MICROWAVE TRANSISTORS
Buy	Stock & Price

APPLICATIONS

REFRACTORY/GOLD METALL IZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 5.0 W MIN. WITH 5.2 dB GAIN .400 x .400 2NL FL (S042) hermetically sealed O RDER CODE AM83135-005 BRANDING 83135-5

DESCRIPTION

duty cycles and temperatures, and can withstand a 5:1 output VSWR. Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure high reliability and product consistency.

ABSOLUTE MAXIMUM RATINGS

(Tcase = 25° C) Symbol Parameter Value Un it PIN CONNECTION 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ TSTG P ower Dissipation* Device Current* (TC ≤ 100 °C) 40 1.8 34 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* J un ction Temperature (Pulsed RF Operation) S torage Temperature THERMAL DATA RTH(j-c) J un ction-Cas e Thermal R e sistance* 3.75 °C/W *Applies only to rated RF a mplifier oper ation August 23, 1996 1/4 AM83135-005

ELECTRICAL SPECIFICATIONS

(T case = 25° C) STATIC Symb ol Test Con ditio ns Value Min.