B11NM80
B11NM80 is N-CHANNEL Power MOSFET manufactured by STMicroelectronics.
Features
Order codes VDSS
RDS(on) max
RDS(on)- Qg
STB11NM80 STF11NM80 STI11NM80 800 V STP11NM80 STW11NM80
< 0.40 Ω
14Ω- n C
11 A
- Low input capacitance and gate charge
- Low gate input resistance
- Best RDS(on)- Qg in the industry
Applications
- Switching applications
Description
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the pany's Power MESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
3 1
D²PAK
3 2 1
TO-220FP
I²PAK
3 2 1
TO-220
3 2 1
TO-247
Figure 1. Internal...
