B9NB50 Overview
Unit V 1 µA 50 µA ±100 nA ON (∗) S ymb ol V GS(th ) RDS( o n ) ID(o n) P a ra m et er Test Conditions Gate Threshold Voltage VDS = VGS ID = 250 µA Static Drain-source On VGS = 10 V ID = 4.3 A Resistance On St ate Drain Current VDS > ID(on) x RDS(on) max VGS = 10 V Min. 5 Unit V 0.75 0.85 Ω Ω 8.6 A DYNAMIC S ymb ol gfs (∗) Ciss Coss Crss P a ra m et er Forward Transconductance Input Capacitance Output Capacitance...