STMicroelectronics BAT47
This publication supersedes and replaces all information previously supplied.DESCRIPTION
General purpose, metal to silicon diodes featuring very low turn-on voltage and fast switching. These devices have integrated protection against excessivevoltage such as electrostaticdischarges. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF IFRM IFSM Parameter Repetitive Peak Reverse Voltage Forward Continuous Current* Repetitive Peak Fordward Current* Surge non Repetitive Forward Current* Ta = 25 °C tp ≤ 1s δ ≤ 0.5 tp = 10ms tp = 1s Ptot Tstg Tj TL Power Dissipation* Storage and Junction Temperature Range Maximum Temperature for Soldering during 10s at 4mm from Case Ta = 25 °C DO 35 (Glass) BAT47 20 350 1 7.5 1.5 330 BAT48 40 Unit V mA A A mW °C °C °C - 65 to + 150 - 65 to + 125 230 THERMAL RESISTANCE Symbol R th(j-l) Junction-ambient* Test Conditions Value 300 Unit °C/W * On infinite heatsink with 4mm lead length August 1999 Ed: 1A 1/5 BAT 47/BAT 48ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS Symbol V(BR) IR = 10µA IR = 25µA V F* Tj = 25°C IF = 0.1mA Tj = 25°C I...