BAT47 Overview
General purpose, metal to silicon diodes featuring very low turn-on voltage and fast switching. These devices have integrated protection against excessivevoltage such as electrostaticdischarges. Unit V DYNAMIC CHARACTERISTICS Symbol C Tj = 25°C VR = 0V Tj = 25°C VR = 1V trr Tj = 25°C IF = 10mA VR = 1V irr = 1mA RL = 100Ω Test Conditions f = 1MHz Min.