STMicroelectronics BCP55
MEDIUM POWER AMPLIFIER
| Part No. | BCP55 |
|---|---|
| Datasheet | BCP55 Download |
| Manufacturer |  STMicroelectronics |
| Description | MEDIUM POWER AMPLIFIER |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V CER V EBO IC I CM IB I BM P tot T stg Tj Parameter BCP55 Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Collector-Emitter Voltage (R BE = 1K Ω ) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature 60 60 60 5 1 1.5 0.1 0.2 2 -65 to 150 150 Value BCP56 100 80 100 V V V V A A A A W o o Unit C C October 1997 1/4 BCP55/56 THERMAL DATA R t hj-amb● R thj-tab
● Thermal Resistance Junction-Ambient Thermal Resistance Junction-Collecor Tab Max Max 62.5 8 o o C/W C/W
● Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm
ELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol I CBO V (BR)CBO Parameter Collector Cut-off Current (I E = 0) Collector-Base Breakdown Voltage (I E = 0) Test Conditions V CB = 30 V V CB = 30 V I C = 100 µ A for BCP55 for BCP56 I C = 20 mA for BCP55 for BCP56 I C = 100 µ A for BCP55 for BCP56 I C = 10 µ A T j = 125 o C 60 100 60 80 60 100 5 Min.
