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BD538 Datasheet Complementary Silicon Power Transistors

Manufacturer: STMicroelectronics

Overview: BD533/5/7 BD534/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS s BD534, BD535, BD536, BD537 AND BD538 ARE SGS-THOMSON PREFERRED.

General Description

The BD533, BD535, and BD537 are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intented for use in medium power linear and switching applications.

The complementary PNP types are BD534, BD536, and BD538 respectively.

TO-220 1 2 3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CES V CEO V EBO I C, I E IB P t ot T stg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector and Emitter Current Base Current Total Dissipation at T c ≤ 25 C o Value BD533 BD534 45 45 45 BD535 BD536 60 60 60 5 8 1 50 -65 to 150 150 BD537 BD538 80 80 80 Uni t V V V V A A W o o Storage Temperature Max.

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