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isc Silicon PNP Power Transistor
DESCRIPTION ·DC Current Gain -
: hFE = 40@ IC= -0.5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -80V(Min) ·Complement to Type BD537
APPLICATIONS ·Designed for use in medium power linear and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-80
VCES
Collector-Emitter Voltage
-80
VCEO
Collector-Emitter Voltage
-80
VEBO
Emitter-Base Voltage
-5
IC
Collector Current-Continuous
-8
IB
Base Current
-1
PC
Collector Power Dissipation @ TC=25℃
50
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT V V V V A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
2.
BD538 Datasheet
