STMicroelectronics BU326A
The BU326A is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal case particularly intended for switch-mode CTV supply system.| Part No. | BU326A |
|---|---|
| Datasheet | BU326A Download |
| Manufacturer |  STMicroelectronics |
| Description | HIGH VOLTAGE NPN SILICON POWER TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
: POWER SUPPLIES s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT s 1 2 TO-3DESCRIPTION
INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Power Dissipation at T case ≤ 25 o C Storage Temperature Max. Operating Junction Temperature Value 900 400 10 6 8 3 75 -65 to 200 200 Unit V V V A A A W o o C C December 2000 1/4 BU326A THERMAL DATA R thj-case Thermal Resistance Junction-case Max 2.33 o C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 900 V V CE = 900 V V EB = 10 V I C = 100 mA 400 T c = 125 o C Min. Typ. Max. 1 2 10 Unit mA mA mA V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage(I B = 0) V CE(sat) ∗ V BE(...
