STMicroelectronics BU808DFI
BU808DFI is a NPN transistor in monolithic Darlington configuration. It is manufactured using ) leMultiepitaxial Mesa technology for cost-effective t(s sohigh performance.| Part No. | BU808DFI |
|---|---|
| Datasheet | BU808DFI Download |
| Manufacturer |  STMicroelectronics |
| Description | HIGH VOLTAGE FAST-SWITCHING NPN TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
te cs COST EFFECTIVE SOLUTION FOR le uHORIZONTAL DEFLECTION IN LOW END dTV UP TO 21 INCHES. bso ProDESCRIPTION - O teThe 3 2 1 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM solete Prroodduucct(s) - ObABSOLUTEMAXIMUM RATINGS
b PSymbol O teVCBO leVCEO oVEBO bsIC O ICM Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Value 1400 700 5 8 10 Unit V V V A A IB Base Current 3A IBM Base Peak Current (tp < 5 ms) Ptot Total Dissipation at Tc = 25 oC 6A 52 W Visol Insulation Withstand Voltage (RMS) from All Three Leads to Exernal Heatsink Tstg Storage Temperature Tj Max. Operating Junction Temperature 2500 -65 to 150 150 V oC oC April 2002 1/7 BU808DFI THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 2.4 oC/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-off Current (VBE = 0) V...
