STMicroelectronics BU808DFX
The BU808DFX is a NPN transistor in monolithic Darlington configuration. It is manufactured using Multiepitaxial Mesa technology for cost-effective high performance.APPLICATIONS
COST EFFECTIVE SOLUTION FOR HORIZONTAL DEFLECTION IN LOW END TV UP TO 21 INCHES.DESCRIPTION
ISOWATT218FX INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB I BM P tot V isol T stg Tj April 2007 Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to Exernal Heatsink Storage Temperature Max. Operating Junction Temperature Value 1400 700 5 8 10 3 6 62 2500 -65 to 150 150 Unit V V V A A A A W V o o C C 1/7 BU808DFX THERMAL DATA R thj-case Thermal Resistance Junction-case Max 2.02 o C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol I CES I EBO V CE(sat) ∗ V BE(sat) ∗ h FE ∗ Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Collector-Emitt...