STMicroelectronics BUF420AW
The BUF420AW is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUF series is designed for use in high-frequency power supplies and motor control applications.| Part No. | BUF420AW |
|---|---|
| Datasheet | BUF420AW Download |
| Manufacturer |  STMicroelectronics |
| Description | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
: SWITCH MODE POWER SUPPLIES s MOTOR CONTROL sDESCRIPTION
TO-247 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V CEV V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = -1.5V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 C Storage Temperature Max. Operating Junction Temperature o Value 1000 450 7 30 60 6 9 200 -65 to 150 150 Unit V V V A A A A W o o C C March 2002 1/8 BUF420AW THERMAL DATA R thj-case Thermal Resistance Junction-Case Max 0.63 o C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol I CER I CEV IEBO Parameter Collector Cut-off Current (R BE = 5 Ω) Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 1000 V V CE = 1000 V V CE = 1000 V V CE = 1000 V V EB = 5 V I C = 200 mA L = 25 mH 450 T C = 100 o C T C = 100 o C Min.
