STMicroelectronics BUL138
The BUL138 is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies.| Part No. | BUL138 |
|---|---|
| Datasheet | BUL138 Download |
| Manufacturer |  STMicroelectronics |
| Description | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERSDESCRIPTION
3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg Tj Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Tc = 25 oC Storage Temperature Max. Operating Junction Temperature June 2001 Value 800 400 9 5 10 2 4 80 -65 to 150 150 Unit V V V A A A A W oC oC 1/6 BUL138 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient Max Max 1.56 62.5 oC/W oC/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICES Collector Cut-off Current (VBE = 0) VCE = 800 V VCE = 800 V Tj = 125 oC ICEO VCEO(sus) Collector Cut-off Current (IB = 0) Collecto...
