STMicroelectronics BUL312FP
The BUL312FP is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.| Part No. | BUL312FP |
|---|---|
| Datasheet | BUL312FP Download |
| Manufacturer |  STMicroelectronics |
| Description | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
HORIZONTAL DEFLECTION FOR TV s SMPS s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s TO-220FPDESCRIPTION
INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB I BM P tot Visol T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p <5 ms) Base Current Base Peak Current (t p <5 ms) Total Dissipation at Tc = 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max. Operating Junction Temperature Value 1150 500 9 5 10 3 4 36 1500 -65 to 150 150 Unit V V V A A A A W V o o C C March 2004 1/6 BUL312FP THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 3.5 62.5 o o C/W C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol I CES I CEO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Test Conditions V CE = 1150 V V CE = 1150 V V CE = 500 V I C = 100 mA L= 25 mH 500 Tj = 125 o C Min.
