BUL67 Overview
Key Specifications
Max Operating Temp: 150 °C
Description
The BUL67 is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds.
| Part | BUL67 |
|---|---|
| Description | NPN Transistor |
| Category | Transistor |
| Manufacturer | STMicroelectronics |
| Size | 82.52 KB |
Available from Utmel Electronic.
Price & Availability
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Utmel Electronic | -3 | - | View Offer |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| BUL642D2 | onsemi | High Gain Bipolar NPN Transistor |
| BUL68A | Seme LAB | NPN Transistor |
| BUL63B | Seme LAB | NPN Transistor |
| BUL62A | Seme LAB | NPN Transistor |
| BUL62B | Seme LAB | NPN Transistor |