STMicroelectronics BUL67
The BUL67 is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and in low cost switch-mode power supplies.| Part No. | BUL67 |
|---|---|
| Datasheet | BUL67 Download |
| Manufacturer |  STMicroelectronics |
| Description | NPN Transistor |
| Buy | Stock & Price |
APPLICATIONS
ELECTRONICS TRANFORMER FOR HALOGEN LAMPS s SWITCH MODE POWER SUPPLIES s TO-220DESCRIPTION
INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C St orage Temperature Max. Operating Junction Temperature Value 700 400 9 10 18 3.5 7 100 -65 to 150 150 Uni t V V V A A A A W o o C C September 1997 1/6 BUL67 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.25 62.5 o o C/W C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO V CEO(sus) V EBO V CE(sat )∗ Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (IB = 0) Collector-Emitter Sustaining Voltage Emitter-...
