BUL67 Datasheet | STMicroelectronics

DESCRIPTION The BUL67 is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and in low cost switch-mode power supplies. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C St orage Temperature Max. Operating Junction Temperature Value 700 400 9 10 18 3.5 7 100 -65 to 150 150 Uni t V V V A A A A W o o September 1997 1/6 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.25 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symb ol I CES I CEO V CEO(sus) V EBO V CE(sat )∗ Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (IB = 0) Collector-Emitter Sustaining Voltage Emitter-Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain INDUCTIVE LOAD Storage Time Fall T ime INDUCTIVE LOAD Storage Time Fall T ime Test Cond ition s V CE = 700 V V CE = 700 V V CE = 400 V I C = 100 m A I E = 10 m A IC = 3 A IC = 4 A IC = 6 A IC = 3 A IC = 4 A IC = 6 A IB = 0.6 A IB = 0.8 A IB = 1.5 A IB = 0.6 A IB = 0.8 A IB = 1.5 A 15 10 2.1 100 3 180 L = 25 m H 400 9 0.8 1 1.5 1.2 1.3 1.5 50 Tj = 125 o C Min. Typ . Max. 100 500 250 Un it µA µA µA V V V V V V V V V BE(s at)∗ h FE∗ I C = 1.5 A VCE = 3 V I C = 10 m A V CE = 5 V I C = 3 A VCL = 250 V I B1 = 0.6 A IB2 = -1.2 A L = 200 µ H I C = 3 A VCL = 250 V I B1 = 0.6 A IB2 = -1.2 A L = 200 µ H T j = 125 o C ts tf ts tf 3.2 180 µs ns µs ns ∗ Pulsed: Pulse duration = 300 µs, duty cycle...