BULB128D - NPN Transistor

STMicroelectronics

General Description

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

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BULB128D npn transistor by STMicroelectronics - Datasheet Preview

Datasheet Details

Part number	BULB128D
Manufacturer	STMicroelectronics
File Size	210.60 KB
Description	NPN Transistor
Datasheet	BULB128D Datasheet

Full PDF Text Transcription for BULB128D (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BULB128D. For precise diagrams, and layout, please refer to the original PDF.

® BULB128D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Ordering Code BULB128D-1 s Marking BULB128D Shipment Tube s s s s s s STMicroelectronics PREFERRED SALESTYPE...

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B128D Shipment Tube s s s s s s STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE 3 12 I2PAK (TO-262) APPLICATIONS: ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS s INTERNAL SCHEMATIC DIAGRAM DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

📁 Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	BULB128-1	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR	ST Microelectronics

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