BULB128D - NPN Transistor

Description

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

STMicroelectronics

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Datasheet Details

Part number	BULB128D
Manufacturer	STMicroelectronics
File Size	210.60 KB
Description	NPN Transistor
Datasheet	BULB128D Datasheet
Additional preview pages of the BULB128D datasheet.

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Full PDF Text Transcription

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® BULB128D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Ordering Code BULB128D-1 s Marking BULB128D Shipment Tube s s s s s s STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE 3 12 I2PAK (TO-262) APPLICATIONS: ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS s INTERNAL SCHEMATIC DIAGRAM DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

Published: Mar 23, 2005 |