BULB128D Datasheet | STMicroelectronics

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0, IB = 2 A, t p < 10 µ s, T j < 150 o C) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 700 400 V (BR)EBO 4 8 2 4 70 -65 to 150 150 Unit V V V A A A A W o C o C 1/7 September 2003 BULB128D-1 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.78 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symbol I CES I CEO V (BR)EBO Parameter Collector Cut-off Current (V BE = 0 V) Collector Cut-off Current (I B = 0) Emitter-Base Breakdown Voltage (I C = 0) Test Conditions V CE = 700 V V CE = 700 V V CE = 400 V I E = 10 m A 9 T C = 125 o C Min. Typ. Max. 100 500 250 18 Unit µA µA µA V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = 100 m A L = 25 m H IC IC IC IC = = = = 0.5 A 1A 2.5 A 4A IB IB IB IB = = = = 0.1 A 0.2 A 0.5 A 1A 0.7 1 1.5 0.5 1.1 1.2 1.3 10 12 32 2.5 V V V V V V V V BE(sat) ∗ Base-Emitter Saturation Voltage DC Current Gain Forward Voltage Drop INDUCTIVE LOAD Storage Time Fall Time RESISTIVE LOAD Storage Time Fall Time I C = 0.5 A IC = 1 A I C = 2.5 A I C = 10 m A IC = 2 A If = 2 A V CC = 200 V I B1 = 0.4 A R BB = 0 Ω (see fig.1) V CC = 250 V I B1 = 0.4 A T p = 300 µ s I B =...