BULK128
BULK128 is NPN Transistor manufactured by STMicroelectronics.
DESCRIPTION
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies.
SOT-82
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage o (I C = 0, I B = 2 A, t p < 10 µ s, T j < 150 C) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 700 400 V (BR)EBO 4 8 2 4 55 -65 to 150 150 Unit V V V A A A A W o C o C
November 2001
1/7
THERMAL DATA
R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 2.27 80 o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
Symbol I CES V (BR)EBO Parameter Collector Cut-off Current (V BE = -1.5 V) Emitter-Base Breakdown Voltage (I C = 0) Test Conditions V CE = 700 V V CE = 700 V I E = 10 m A T C = 125 o C 9 Min. Typ. Max. 50 500 18 Unit µA µA V
V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) I CEO V CE(sat) ∗ Collector Cut-Off Current (I B = 0) Collector-Emitter Saturation Voltage
I C = 100 m A
L = 25 m H
V CE = 400 V IC IC IC IC = = = = 0.5 A 1A 2.5 A 4A IB IB IB IB = = = = 0.1 A 0.2 A 0.5 A 1A
250 0.7 1 1.5 0.5 1.1 1.2 1.3 10 14 1.5 0.2 0.6 0.1 28 3 0.4 1 0.2
µA V V V V V V V
V BE(sat) ∗
Base-Emitter Saturation Voltage DC Current Gain RESISTIVE LOAD Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time
I C = 0.5 A IC = 1 A I C = 2.5 A I C = 10 m A IC = 2 A V CC = 125 V I B1 = 0.4 A T p = 30 µ s IC = 2 A V BE(off) = -5 V V clamp...
