BULK128D-B Datasheet | STMicroelectronics

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj August 2001 Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0, IB = 2 A, t p < 10 µ s, T j < 150 o C) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 700 400 BV EBO 4 8 2 4 55 -65 to 150 150 Unit V V V A A A A W o C o C 1/7 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 2.27 80 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symbol I CES I CEO Parameter Collector Cut-off Current (V BE = -1.5 V) Collector-Emitter Leakage Current (I B = 0) Emitter-Base Breakdown Voltage (I C = 0) Test Conditions V CE = 700 V V CE = 700 V V CE = 400 V T C = 125 o C Min. Typ. Max. 100 500 250 Unit µA µA µA BV EBO I E = 10 m A V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) ∗ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Forward Voltage Drop RESISTIVE LOAD Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time I C = 100 m A L = 25 m H I C = 0.5 A IC = 1 A I C = 2.5 A I C = 0.5 A IC = 1 A I C = 2.5 A I C = 10 m A IC = 2 A If = 2 A V CC = 250 V I B1 = 0.4 A T p = 30 µ s V CC = 200 V I B1 = 0.4 A R BB = 0 Ω (see fig. 1) I B = 0.1 A I B = 0.2 A I B = 0.5 A I B = 0.1 A I B = 0.2 A I B = 0.5 A V CE = 5 V V CE = 5 V...